High-Power 880-nm Diode-Directly-Pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 nm with a Semiconductor Saturable Absorber Mirror
Document Type
Article
Publication Date
2011
Publication Title
Optics Letters
DOI
10.1364/OL.36.001485
Abstract
A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO4laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively.
Recommended Citation
Li, Fang-Qin, Ke Liu, Lin Han, Nan Zong, Yong Bo, Jing-Yuan Zhang, Qin-Jun Peng, Da-Fu Cui, Zu-Yan Xu.
2011.
"High-Power 880-nm Diode-Directly-Pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 nm with a Semiconductor Saturable Absorber Mirror."
Optics Letters, 36 (8): 1485-1487: Optica Publishing Group.
doi: 10.1364/OL.36.001485
https://digitalcommons.georgiasouthern.edu/physics-facpubs/93
