High-Power Diode Side-Pumped Nd: YAG Laser on the Low Gain Three Lines Near 1.1 μm

Authors

Z. Wang, Chinese Academy of Sciences
Yong Bo, Chinese Academy of SciencesFollow
Shi-Yong Xie, Chinese Academy of SciencesFollow
Chao-Yang Li, Chinese Academy of SciencesFollow
Yi-Ting Xu, Chinese Academy of SciencesFollow
Feng Yang, Chinese Academy of Sciences
J. Xu, Chinese Academy of SciencesFollow
Qin-Jun Peng, Chinese Academy of SciencesFollow
Jing-Yuan Zhang, Georgia Southern UniversityFollow
Da-Fu Cui, Chinese Academy of SciencesFollow
Z. Xu, Chinese Academy of SciencesFollow

Document Type

Article

Publication Date

7-2011

Publication Title

Applied Physics B

DOI

10.1007/s00340-011-4431-5

Abstract

We demonstrate a high-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm. By tuning the tilting angle of a solid etalon in the cavity, the laser can be selectively operated at 1112, 1116 and 1123 nm either in continuous-wave (CW) mode or in actively Q-switched (QS) mode, respectively. The highest average CW output powers were 75, 47 and 71 W at 1112, 1116 and 1123 nm, respectively. The transmittances of the etalon were calculated to analyze the performance of the laser at the three lines. Furthermore, a computational model of a three-wavelength laser based on rate equations was employed to examine the line selectivity of the three lines near 1.1 μm at different tilting angles of the etalon.

Recommended Citation

Wang, Z., Yong Bo, Shi-Yong Xie, Chao-Yang Li, Yi-Ting Xu, Feng Yang, J. Xu, Qin-Jun Peng, Jing-Yuan Zhang, Da-Fu Cui, Z. Xu. 2011. "High-Power Diode Side-Pumped Nd: YAG Laser on the Low Gain Three Lines Near 1.1 μm." Applied Physics B, 104 (1): 45-52: Springer. doi: 10.1007/s00340-011-4431-5
https://digitalcommons.georgiasouthern.edu/physics-facpubs/92