Compact Diode-Directly-Pumped Passively Mode-Locked TEM_oo Nd: GdVO₄ Laser at 1341 nm Using a Semiconductor Saturable Absorber Mirror

Authors

Ke Liu, Chinese Academy of SciencesFollow
Fang-Qin Li, Chinese Academy of SciencesFollow
Y. Liu, Chinese Academy of Sciences
Dong Cao, Chinese Academy of SciencesFollow
Yong Bo, Chinese Academy of SciencesFollow
Qin-Jun Peng, Chinese Academy of SciencesFollow
Da-Fu Cui, Chinese Academy of SciencesFollow
Jing-Yuan Zhang, Georgia Southern UniversityFollow
Zu-Yan Xu, Chinese Academy of SciencesFollow

Document Type

Article

Publication Date

1-2012

Publication Title

Laser Physics

DOI

10.1134/S1054660X12010112

Abstract

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM₀₀ Nd:GdVO4laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M 2 = 1.18, indicating a TEM₀₀ mode.

Recommended Citation

Liu, Ke, Fang-Qin Li, Y. Liu, Dong Cao, Yong Bo, Qin-Jun Peng, Da-Fu Cui, Jing-Yuan Zhang, Zu-Yan Xu. 2012. "Compact Diode-Directly-Pumped Passively Mode-Locked TEM_oo Nd: GdVO₄ Laser at 1341 nm Using a Semiconductor Saturable Absorber Mirror." Laser Physics, 22 (1): 95-99: Springer. doi: 10.1134/S1054660X12010112
https://digitalcommons.georgiasouthern.edu/physics-facpubs/88