High Power Diode-Side-Pumped 1 112-nm Nd:YAG Laser Based on Master-Oscillator Power-Amplifier System

Authors

Biaolong Liu, Chinese Academy of SciencesFollow
Zhichao Wang, Chinese Academy of Sciences
Feng Yang, Chinese Academy of Sciences
Zhimin Wang, Chinese Academy of Sciences
Yong Bo, Chinese Academy of SciencesFollow
Hongtao Yuan, Chinese Academy of Sciences
Lei Yuan, Chinese Academy of Sciences
Baoshan Wang, Chinese Academy of Sciences
Jialin Xu, Chinese Academy of SciencesFollow
Yading Guo, Chinese Academy of SciencesFollow
Qinjun Peng, Chinese Academy of SciencesFollow
Jing-yuan Zhang, Georgia Southern UniversityFollow
Da-fu Cui, Chinese Academy of SciencesFollow
Zuyan Xu, Chinese Academy of SciencesFollow

Document Type

Article

Publication Date

2014

Publication Title

Chinese Optics Letters

Abstract

We demonstrate a high power high beam quality diode-pumped 1 112-nm Nd:YAG master-oscillator poweramplifier (MOPA) laser system. To increase the extraction efficiency and output power, a four-pass amplifier scheme is employed. Finally, the injected laser output power is amplified from 26 to 64 W with beam quality factor M2=2.85. Furthermore, a theoretical model that takes the temporal overlap inversion number dynamics into account is employed to analyze the performance of the MOPA laser system, and a good agreement with the experimental data is obtained.

Recommended Citation

Liu, Biaolong, Zhichao Wang, Feng Yang, Zhimin Wang, Yong Bo, Hongtao Yuan, Lei Yuan, Baoshan Wang, Jialin Xu, Yading Guo, Qinjun Peng, Jing-yuan Zhang, Da-fu Cui, Zuyan Xu. 2014. "High Power Diode-Side-Pumped 1 112-nm Nd:YAG Laser Based on Master-Oscillator Power-Amplifier System." Chinese Optics Letters, 12 (3): Optica.
https://digitalcommons.georgiasouthern.edu/physics-facpubs/103