Effect of Reactor Pressure on the Electrical and Structural Properties of InN Epilayers Grown by High-pressure Chemical Vapor Deposition, Ananta R. Acharya, M.K. Indika Senevirathna, Sampath Gamage, Ramazan Atalay, Ananta R. Acharya, A. G. Unil Perera, Nikolaus Dietz, Max Buegler, Axel Hoffmann, Liqin Su, Andrew Melton, Ian Ferguson
Ananta R. Acharya

Substrate Template and V/III-Ratio Effects on the Surface And Structural Properties of HPCVD Grown InN Films, Ananta R. Acharya, Max Buegler, Ramazan Atalay, Samantha Gamage, J. S. Tweedie, R. Collazo, Nikolaus Dietz, Brian D. Thoms
Ananta R. Acharya

The Relationship between Surface Termination and Crystal Structure for HPCVD-grown InN Layers, Ananta R. Acharya, Max Buegler, Samantha Gamage, J. S. Tweedie, R. Collazo, Nikolaus Dietz, Brian D. Thoms
Ananta R. Acharya

Composition and Structure of HPCVD-grown InGaN, Ananta R. Acharya, Max Buegler, Goksel Durkaya, Brian Thoms, Nikolaus Dietz
Ananta R. Acharya