High-Power Diode Side-Pumped Nd: YAG Laser on the Low Gain Three Lines Near 1.1 μm
Document Type
Article
Publication Date
7-2011
Publication Title
Applied Physics B
DOI
10.1007/s00340-011-4431-5
Abstract
We demonstrate a high-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm. By tuning the tilting angle of a solid etalon in the cavity, the laser can be selectively operated at 1112, 1116 and 1123 nm either in continuous-wave (CW) mode or in actively Q-switched (QS) mode, respectively. The highest average CW output powers were 75, 47 and 71 W at 1112, 1116 and 1123 nm, respectively. The transmittances of the etalon were calculated to analyze the performance of the laser at the three lines. Furthermore, a computational model of a three-wavelength laser based on rate equations was employed to examine the line selectivity of the three lines near 1.1 μm at different tilting angles of the etalon.
Recommended Citation
Wang, Z., Yong Bo, Shi-Yong Xie, Chao-Yang Li, Yi-Ting Xu, Feng Yang, J. Xu, Qin-Jun Peng, Jing-Yuan Zhang, Da-Fu Cui, Z. Xu.
2011.
"High-Power Diode Side-Pumped Nd: YAG Laser on the Low Gain Three Lines Near 1.1 μm."
Applied Physics B, 104 (1): 45-52: Springer.
doi: 10.1007/s00340-011-4431-5
https://digitalcommons.georgiasouthern.edu/physics-facpubs/92
